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VBR(GSS)cap V sub cap B cap R open paren cap G cap S cap S close paren end-sub IDcap I sub cap D Maximum Power Dissipation PDcap P sub cap D Forward Transfer Admittance (Min) gfsg sub f s end-sub 8.0 mS (millisiemens) Maximum Input Capacitance Cisscap C sub i s s end-sub Maximum Pinch-off Voltage Vpcap V sub p Pinout and Package Design

Its dual-gate design allows for efficient automatic gain control (AGC) or local oscillator injection without compromising stability. Sourcing & Replacements

: Contains detailed information on pinouts, circuit diagrams, and equivalent components.

The is a classic, high-performance N-channel dual-gate MOSFET originally designed for high-frequency Radio Frequency (RF) applications, such as TV tuners, VHF/UHF RF amplifiers, and mixers . Housed in a vintage metal CAN-4 package , this component is widely sought after by vintage electronics enthusiasts, radio repair technicians, and RF hardware designers for its excellent cross-modulation characteristics and low noise figure.

Specialists like RF Parts Company maintain inventories of original active components for older communication gear.

Acts as an automatic gain control (AGC) node or a shield. It significantly drops the internal reverse transfer capacitance ( Crsscap C sub r s s end-sub

: Provides various versions of the PDF datasheet from multiple manufacturers.

This public link is valid for 7 days and shares a thread, including any personal information you added. This link or copies made by others cannot be deleted. If you share with third parties, their policies apply. Can’t copy the link right now. Try again later.

Provides significant signal boost in the VHF range.

According to its datasheet specifications, the 3SK41 was engineered for:

By varying the DC bias voltage applied to Gate 2, you can seamlessly control the overall gain of the amplifier stage without heavily detuning the input tank circuit attached to Gate 1. Common Applications

3sk41 Datasheet

VBR(GSS)cap V sub cap B cap R open paren cap G cap S cap S close paren end-sub IDcap I sub cap D Maximum Power Dissipation PDcap P sub cap D Forward Transfer Admittance (Min) gfsg sub f s end-sub 8.0 mS (millisiemens) Maximum Input Capacitance Cisscap C sub i s s end-sub Maximum Pinch-off Voltage Vpcap V sub p Pinout and Package Design

Its dual-gate design allows for efficient automatic gain control (AGC) or local oscillator injection without compromising stability. Sourcing & Replacements

: Contains detailed information on pinouts, circuit diagrams, and equivalent components. 3sk41 datasheet

The is a classic, high-performance N-channel dual-gate MOSFET originally designed for high-frequency Radio Frequency (RF) applications, such as TV tuners, VHF/UHF RF amplifiers, and mixers . Housed in a vintage metal CAN-4 package , this component is widely sought after by vintage electronics enthusiasts, radio repair technicians, and RF hardware designers for its excellent cross-modulation characteristics and low noise figure.

Specialists like RF Parts Company maintain inventories of original active components for older communication gear. VBR(GSS)cap V sub cap B cap R open

Acts as an automatic gain control (AGC) node or a shield. It significantly drops the internal reverse transfer capacitance ( Crsscap C sub r s s end-sub

: Provides various versions of the PDF datasheet from multiple manufacturers. Housed in a vintage metal CAN-4 package ,

This public link is valid for 7 days and shares a thread, including any personal information you added. This link or copies made by others cannot be deleted. If you share with third parties, their policies apply. Can’t copy the link right now. Try again later.

Provides significant signal boost in the VHF range.

According to its datasheet specifications, the 3SK41 was engineered for:

By varying the DC bias voltage applied to Gate 2, you can seamlessly control the overall gain of the amplifier stage without heavily detuning the input tank circuit attached to Gate 1. Common Applications

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3sk41 datasheet